2SC4437 Datasheet and Specifications PDF

The 2SC4437 is a NPN Triple Diffused Planar Silicon Transistor.

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Part Number2SC4437 Datasheet
ManufacturerSANYO
Overview Ordering number:EN3792 NPN Triple Diffused Planar Silicon Transistor 2SC4437 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features · High speed (tf=0.3ns max). · High.
* High speed (tf=0.3ns max).
* High breakdown voltage (VCBO=1500V).
* High reliability (adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC4437] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C.
Part Number2SC4437 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PML package ·High speed ·High breakdown voltage ·High reliability APPLICATIONS ·Ultrahigh-definition color display ·Horizontal deflection output applications PINNING PIN 1 2 3 DESCRIPTION Ba. age Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA; IB=0 IC=4A;IB=1A IC=4A;IB=1A VCE=1500V VCB=800V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 8 4 6 MIN 800 5 1.5 1.0 10 1.0 TYP. MA.
Part Number2SC4437 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh. CEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter .