| Part Number | 2SC4796 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·High Switching Speed ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL. ETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICES Collector Cutoff Current VCE= 1700V; RBE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 . |
2SC4796 Datasheet and Specifications PDF
The 2SC4796 is a NPN Transistor.
| Part Number | 2SC4796 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SC4796
Silicon NPN Triple Diffused
Application
TV / character display horizontal deflection output
TO–3PFM
Features
• High speed switching tf ≤ 0.6 µs • High breakdown voltage VCBO = 1700 V • Isol.
* High speed switching tf ≤ 0.6 µs * High breakdown voltage VCBO = 1700 V * Isolated package TO *3PFM 1 2 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge curr. |