2SC5130 Datasheet and Specifications PDF

The 2SC5130 is a NPN TRANSISTOR.

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Part Number2SC5130 Datasheet
ManufacturerSanken
Overview 2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5130 600 400 10 5. V CE Characteristics (Typical) 800 mA VCE(sat)
*IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 1.5 I C / I B =5 Const. I C
* V BE Temperature Characteristics (Typical) (V C E =4V) 5 5 50 0m A Collector Current I C (A) 30 0m A 1.0 3 Collector Current I C .
Part Number2SC5130 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO. X UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 1.5A; IB= 0.3A VCB= 500V; IE= 0 1.3 V 100 μA IEBO Emitter Cutoff .
Part Number2SC5130 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220F package ·High voltage. ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-. Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ; IB=0 IC=1.5A ;IB=0.3A IC=1.5A ;IB=0.3A VCB=500V; IE=0 VEB=10V; IC=0 IC=1.5A ; VCE=4V IE=0; VCB=10V;f=1MHz IC=-0.3A ; VCE=12V 10 MIN 400 2SC5130 SYMBOL V(BR)CEO VCEsat VBEs.

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