The 2SC5199 is a NPN TRANSISTOR.
| Part Number | 2SC5199 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5199 Power Amplifier Applications 2SC5199 Unit: mm • High breakdown voltage: VCEO = 160 V (min) • Complementary to 2SA1942 • Suitable for use i. maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-10 Electrical . |
| Part Number | 2SC5199 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PL package ·Complement to type 2SA1942 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;c. oltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A; IB=0.8A IC=6A ; VCE=5V VCB=160V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VC. |
| Part Number | 2SC5199 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Complement to Type 2SA1942 ·100% avalanche tested ·Minimum Lot-to-Lot variations for . CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 2.5 V VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IC. |
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| Part Number | Manufacturer | Description |
|---|---|---|
| C5199 | Toshiba | 2SC5199 |