2SC5199 Description
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.
2SC5199 is NPN Transistor manufactured by Inchange Semiconductor .
| Manufacturer | Part Number | Description |
|---|---|---|
| 2SC5199 | NPN TRANSISTOR | |
SavantIC |
2SC5199 | SILICON POWER TRANSISTOR |
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.