2SC5199 Overview
·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.
| Part number | 2SC5199 |
|---|---|
| Datasheet | 2SC5199-INCHANGE.pdf |
| File Size | 179.50 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 160 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
| 2SC5199 | NPN TRANSISTOR | Toshiba Semiconductor | |
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2SC5199 | SILICON POWER TRANSISTOR | SavantIC |
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