2SC5199
DESCRIPTION
- High Current Capability
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min)
- plement to Type 2SA1942
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Remend for 80W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc Website：.iscsemi.cn
1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor
INCHANGE...
