2SC5196
DESCRIPTION
- Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Min) @IC= 5A
- Good Linearity of h FE
- plement to Type 2SA1939
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Remend for 40W high fidelity audio frequency amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc Website：.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Product Specification isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
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