Download 2SC5197 Datasheet PDF
Inchange Semiconductor
2SC5197
DESCRIPTION - Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Min) @IC= 6A - Good Linearity of h FE - plement to Type 2SA1940 - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Power amplifier applications - Remend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:.iscsemi.cn 1 isc & iscsemi isregistered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor ELECTRICAL CHARACTERISTICS...