| Part Number | 2SC5242 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications 2SC5242 Unit: mm • High Collector breakdown voltage: VCEO = 230 V (min) • Complementary to 2SA1962 • Suitable. in the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-08. |
2SC5242 Datasheet and Specifications PDF
The 2SC5242 is a Silicon NPN TRANSISTOR.
| Part Number | 2SC5242 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SA1962 ·High collector voltage: VCEO=230V(Min) APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output. -emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=8 A;IB=0.8A IC=7A ; VCE=5V VCB=230V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=1A ; VCE=5V I. |
| Part Number | 2SC5242 Datasheet |
|---|---|
| Description | NPN Epitaxial Silicon Transistor |
| Manufacturer | Fairchild Semiconductor |
| Overview |
2SC5242/FJA4313
NPN Epitaxial Silicon Transistor
Applications
• High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier
Features
• High Current Capability: IC = 17A • High Power Dissipa.
* High Current Capability: IC = 17A * High Power Dissipation : 130watts * High Frequency : 30MHz. * High Voltage : VCEO=250V * Wide S.O.A for reliable operation. * Excellent Gain Linearity for low THD. * Complement to 2SA1962/FJA4213. * Thermal and electrical Spice models are available * Same transi. |
| Part Number | 2SC5242 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC. age IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V ICBO Collector Cutoff Current VCB= 230V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain . |