Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- High Collector Breakdown Voltage-
: V(BR)CEO= 230V(Min.)
- Good Linearity of hFE
- plement to Type 2SA1962
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Power amplifier applications
- Remend for 80W high fidelity audio frequency amplifier output stage...