Datasheet Details
| Part number | 2SC5242 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5242-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SC5242.
| Part number | 2SC5242 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SC5242-INCHANGE.pdf |
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·High Collector Breakdown Voltage- : V(BR)CEO= 230V(Min.) ·Good Linearity of hFE ·Complement to Type 2SA1962 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 130 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 7A ;
Compare 2SC5242 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SC5242 | Silicon NPN TRANSISTOR | Toshiba Semiconductor |
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2SC5242 | SILICON POWER TRANSISTOR | SavantIC |
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2SC5242 | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
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