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2SC5244 - Silicon NPN Power Transistor

Description

High breakdown voltage, and high reliability Wide area of safe operation High-speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for horizontal deflection output applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage, and high reliability ·Wide area of safe operation ·High-speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 200 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5244 isc website：www.iscsemi.
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