Datasheet4U Logo Datasheet4U.com

2SC5248 - Silicon NPN Power Transistor

General Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Good Linearity of hFE Wide Area of Safe Operation Complement to Type 2SA1964 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Power amplifier applications.

Dr

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC5248 High Voltage Switching Transistor Rohm
2SC5248 Silicon NPN transistor BLUE ROCKET ELECTRONICS
2SC524 SILICON NPN TRANSISTOR Toshiba
2SC5241 Switching Power Transistor Shindengen Electric Mfg.Co.Ltd
2SC5241 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SC5242 NPN Transistor
2SC5244 Silicon NPN Power Transistor
2SC5249 NPN Transistor
2SC5200 NPN Transistor
2SC5200H NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor 2SC5248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1.5 A 2 W 20 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.