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2SC5299 Datasheet

The 2SC5299 is a NPN TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part Number2SC5299
ManufacturerSANYO
Overview Ordering number:EN5293 NPN Triple Diffused Planar Silicon Transistor 2SC5299 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed : tf=100ns typ. · High b.
* High speed : tf=100ns typ.
* High breakdown voltage : VCBO=1500V.
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2039D [2SC5299] 16.0 3.4 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter C.
Part Number2SC5299
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Ultrahigh-def. VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 ICES Collector Cutoff Current VCE= 1500V; RBE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE-1 DC current gain IC= 1.
Part Number2SC5299
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PML package ·High breakdown voltage, high reliability. ·High speed APPLICATIONS ·Ultrahigh-definition CRT display ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector . Collector-emitter sustaining voltage Emitter cut-off current Collector cut-off current Collector cut-off current DC current gain DC current gain CONDITIONS IC=8A;IB=2 A IC=8A;IB=2 A IC=100mA;IB=0 VEB=4V ;IC=0 VCB=800V ;IE=0 VCE=1500V; RBE=0 IC=1 A ; VCE=5V IC=8A ; VCE=5V 20 4 800 1.0 10 1 30 7 MIN T.