| Part Number | 2SD1046 Datasheet |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:ENN677D
PNP/NPN Epitaxial Planar Silicon Transistors
2SB816/2SD1046
For LF Power Amplifier, 50W Output Large Power Switching Applications
Features
· Capable of being mounted easily b.
* Capable of being mounted easily because of onepoint fixing type plastic molded package (Interchangeable with TO-3). * Wide ASO because of built-in ballast resistance. * Goode dependence of fT on current and good HF characteristic. Package Dimensions unit:mm 2022A [2SB816/2SD1046] 3.5 15.6 14.0 2.. |
2SD1046 Datasheet and Specifications PDF
The 2SD1046 is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SD1046 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type 2SB816 ·Wide area of safe operation APPLICATIONS ·For LF power amplifier, 50W output large power switching applications PINNING PIN 1 2 3 Base Collector;connec. reakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;RBE=; IC=5mA ;IE=0 IE=5mA ;IC=0 IC=5A ;IB=0.5A IC=1A;VCE=5V VCB=80V IE. |
| Part Number | 2SD1046 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for r. S MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC=30mA ; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A 1.0 2.0 V . |