2SD1126 Datasheet and Specifications PDF

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base 2. Collector (Flange) 3. Emitter ID 1.5 kΩ (Typ) 130 Ω (Typ) 3 1 2 3 2SD1126(K) Absolute Maximum .

0.1 A*1 I D = 10 A*1 I C = 5 A, IB1 =
*IB2 = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forwar.

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 1 23 ADE-208-904 (Z) 1st. Edition September 2000 1. Base 2. Collector (Flange) 3. Emitter 2 1 ID 1.5 kΩ (Typ) .

ge C to E diode forward voltage Turn on time Turn off time Note: 1. Pulse test. I CBO I CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VD t on t off
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* 8.0 Max Unit
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* V 100 µA 10 µA 2000 1.5 V 3.0 V 2.0 V 3.5 V 3.0 V
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reli.

BO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 10mA VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; I.