| Part Number | 2SD1236L |
|---|---|
| Manufacturer | SANYO |
| Overview |
Ordering number:1796B
PNP/NPN Epitaxial Planar Silicon Transistors
2SB920L/2SD1236L
80V/5A Switching Applications
Applications
· Relay drivers, high-speed inverters, converters, and other general hi.
* Low-saturation collector-to-emitter voltage : VCE(sat)= *0.5V (PNP), 0.4V (NPN) max. * High current capacity. Package Dimensions unit:mm 2010C [2SB920L/2SD1236L] ( ) : 2SB920L Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage . |
2SD1236L Datasheet
The 2SD1236L is a PNP/NPN Epitaxial Planar Silicon Transistors.
| Part Number | 2SD1236L |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB920L ·Low collector saturation voltage ·Large current capacity. APPLICATIONS ·Relay drivers,high speed inverters, converters,and other general high-current. age Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=1mA ;RBE=; IC=1mA ;IE=0 IE=1mA; IC=0 IC=3A; IB=0.3A VCB=80V; IE=0 VEB=4V; IC=0 IC=1A ; VCE=2V IC=3A ; VCE=2V IC. |
| Part Number | 2SD1236L |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 3A ·Large Current Capacity ·Complement to Type 2SB920L ·Minimum Lot-to-Lot variations for robust device performance and reliable operation . TER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 90 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.4. |