2SD1408 Datasheet and Specifications PDF

The 2SD1408 is a Silicon NPN Transistor.

Key Specifications

Part Number2SD1408 Datasheet
ManufacturerToshiba
Overview SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20— 25W Hig. . High Power Dissipation : Pc= ?5W (Tc=25 °C) . Good Linearity of hEE . Complementary to 2SB1017 . Recommended for 20
* 25W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector C.
Part Number2SD1408 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage : VCE(sat)= 1.5V(Max)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Complement to Type 2SB1017 ·Minimum Lot-to-Lot variations for robust device. ollector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V COB Output Capac.

Price & Availability

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Similar Datasheets

Part Number Manufacturer Description
D1408 Toshiba 2SD1408