| Part Number | 2SD1475 Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device perf. 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 4V hFE-2 DC Current Gain IC= 3A; VCE=. |
2SD1475 Datasheet and Specifications PDF
The 2SD1475 is a Silicon NPN Transistor.
| Part Number | 2SD1475 Datasheet |
|---|---|
| Description | Silicon NPN Transistor |
| Manufacturer | Panasonic |
| Overview |
Power Transistors
2SD1475
Silicon NPN triple diffusion planar type
For power switching
0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Unit: mm
4.2±0.2
s Features
q q q q
High-speed .
q q q q
High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 80 60 6 8 4 1 35 2 150 *55 to +150 Unit V V V A A A W ˚C ˚C 7.5±0.2 16.7±0.3 φ3. |