2SD1535 Datasheet and Specifications PDF

The 2SD1535 is a Silicon NPN Transistor.

Key Specifications

PackageTO-220-3
Mount TypeThrough Hole
Max Operating Temp150 °C
Part Number2SD1535 Datasheet
ManufacturerPanasonic
Overview Power Transistors 2SD1535 Silicon NPN triple diffusion planar type Darlington For high power amplification 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm s Features q q q q Extremely sa. q q q q Extremely satisfactory linearity of the forward current transfer ratio hFE High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 500 400 12 14 7 0.5 50 2 150
*55 to +150 Unit V V V A A.
Part Number2SD1535 Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO. Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; RBZ=>,L=25mH IC=7A ; IB=70mA IC=7A ; IB=70mA VCB=500V; IE=0 VCE=400V; IB=0 VEB=12V; IC=0 IC=2A ; VCE=2V IC=6A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 500 200.
Part Number2SD1535 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Base Breakdown Voltage- : V(BR)CBO = 500V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for h. Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA V BE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 70mA ICBO Collector Cutoff Current VCB= 500V; IE= 0 ICEO Collector Cutoff Current VCE= 400V; IB= 0 IEBO Emitter Cutoff Current VEB= 12V; IC= 0 hFE-1 DC Current Gain IC= 2A; VCE=.

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