With TO-220Fa package
Wide area of safe operation
High breakdown voltage
DARLINGTON APPLICATIONS
For high power amplification
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCE
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SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1535
www.datasheet4u.com
DESCRIPTION ·With TO-220Fa package ·Wide area of safe operation ·High breakdown voltage ·DARLINGTON APPLICATIONS ·For high power amplification
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 12 7 14 0.