2SD1535 Overview
Description
With TO-220Fa package - Wide area of safe operation - High breakdown voltage - DARLINGTON APPLICATIONS - For high power amplification PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 12 7 14 0.5 50 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A; RBZ=>,L=25mH IC=7A ; IB=70mA IC=7A ; IB=70mA VCB=500V; IE=0 VCE=400V; IB=0 VEB=12V; IC=0 IC=2A ; VCE=2V IC=6A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 500 200 MIN 400 2SD1535 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V 2.0 2.5 0.1 0.1 100 V V mA mA mA 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=7A ; IB1=-IB2=70mA VCC=300V 1.5 5.0 6.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1535 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3.
