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2SD2029 Datasheet

The 2SD2029 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2029
ManufacturerPanasonic
Overview Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1347 20.0±0.5 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 6.0 s Features q q q q Satisfactor. q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings 160 160 5 20 12 120 3.5 150
*55 to +155 Unit V V V A 26.0±0.5 10.0 1.
Part Number2SD2029
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1347 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. or-Emitter Saturation Voltage IC= 8A; IB= 0.8A VBE(on) Base-Emitter On Voltage IC= 8A; VCE= 5V ICBO Collector Cutoff Current VCB= 160V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE-1 DC Current Gain IC= 20mA; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V hFE-3 DC Current Gai.
Part Number2SD2029
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3PL package ·Complement to type 2SB1347 ·Wide area of safe operation ·High transition frequency APPLICATIONS ·Optimum for the output stage of a Hi-Fi audio amplifier applications PINNING PIN . r-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=8A ; VCE=5V VCB=160V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC.