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2SD2029 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Wide Area of Safe Operation Complement to Type 2SB1347 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of

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Datasheet Details

Part number 2SD2029
Manufacturer INCHANGE
File Size 212.34 KB
Description NPN Transistor
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isc Silicon NPN Power Transistor 2SD2029 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1347 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 20 A 120 W 3.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
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