Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
Good Linearity of hFE
Wide Area of Safe Operation
Complement to Type 2SB1346
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for low frequency and general
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isc Silicon NPN Power Transistor
2SD2027
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SB1346 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low frequency and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
8
A
1.75 W
30
150
℃
Tstg
Storage Temperature
-55~150
℃
isc website：www.iscsemi.
2SD2027 Datasheet
