| Part number | 2SD2027 |
|---|---|
| Datasheet | 2SD2027_InchangeSemiconductor.pdf |
| File Size | 209.36 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Power Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SB1346 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency and general purpose amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor Tj=25℃ unless otherwise specified SYMBOL...
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| 2SD2102 | Silicon NPN Power Transistor |
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| 2SD2112 | Power Transistor |
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