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2SD2022 - NPN Transistor

General Description

High DC Current Gain- : hFE = 3000(Min)@ IC= 1A Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplif

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isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor 2SD2022 DESCRIPTION ·High DC Current Gain- : hFE = 3000(Min)@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low-frequency amplifications. ·Power amplifier applications.