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2SD2276 Datasheet

The 2SD2276 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2276
ManufacturerPanasonic
Overview Power Transistors 2SD2276 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1503 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 20.0±0.5 s Features q q q 6.0 1.5 1. q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC.
Part Number2SD2276
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) ·Co. rwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 7mA ICBO Collector Cutoff Current VCB= 160V; IE= 0 ICEO Collector Cu.

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