2SD2384 Datasheet
2SD2384 Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 6A ·Complement to Type 2SB1555 ·Minimum Lot-to-Lot variations for robust device performance and .
Voltage IC= 50mA ; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 6mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 5V 3.0 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC.
2SD2384 Datasheet (Toshiba)
Toshiba
2SD2384 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2384 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary .
140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 6 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 10 A IC = 6 A, IB = 6 mA VCE = 5 V, IC = 6 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classifi.