| Part number | 2SD2384 |
|---|---|
| Datasheet | 2SD2384-INCHANGE.pdf |
| File Size | 200.64 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2384 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2384 | NPN Transistor | Toshiba Semiconductor |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SD2385 | NPN Transistor |
| 2SD2389 | NPN Transistor |
| 2SD2300 | NPN Transistor |
| 2SD2328 | NPN Transistor |
| 2SD2331 | NPN Transistor |
| 2SD2333 | NPN Transistor |
| 2SD2335 | NPN Transistor |
| 2SD234 | NPN Transistor |
| 2SD2340 | NPN Transistor |
| 2SD2348 | NPN Transistor |
