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2SD2385 - NPN Transistor

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Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) High DC Current Gain- : hFE= 5000(Min)@IC= 7A Complement to Type 2SB1556 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSO

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Datasheet Details

Part number 2SD2385
Manufacturer INCHANGE
File Size 200.61 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2385 isc website：www.iscsemi.
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