The 2SD2385 is a NPN Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SD2385 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | 2SD2385 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2385 Power Amplifier Applications Unit: mm · High breakdown voltage: VCEO = 140 V (min) · Complementary . 140 V, IE = 0 IEBO VEB = 5 V, IC = 0 V (BR) CEO IC = 50 mA, IB = 0 hFE (1) (Note) VCE = 5 V, IC = 7 A hFE (2) VCE (sat) VBE fT Cob VCE = 5 V, IC = 12 A IC = 7 A, IB = 7 mA VCE = 5 V, IC = 7 A VCE = 5 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz ― ― 140 5000 2000 ― ― ― ― Note: hFE (1) classifi. |
| Part Number | 2SD2385 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= 7A ·Complement to Type 2SB1556 ·Minimum Lot-to-Lot variations for robust device performance and . Voltage IC= 50mA ; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 7mA 2.5 V VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= 5V 3.0 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC=. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
| Part Number | Manufacturer | Description |
|---|---|---|
| D2385 | Toshiba | 2SD2385 |