| Part Number | 2SD2493 Datasheet |
|---|---|
| Manufacturer | Sanken |
| Overview |
Equivalent circuit
C
Darlington
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2493 110 110 5 6 1 60(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SD2493
sElectric.
5 IB2 (mA) *5 ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ Weight : Approx 6.0g a. Type No. b. Lot No. I C * V CE Characteristics (Typical) A 1m V CE ( sat ) * I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 I C * V BE Temperature Characteristics (Typi. |
2SD2493 Datasheet and Specifications PDF
The 2SD2493 is a Silicon NPN Transistor.
| Part Number | 2SD2493 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type 2SB1624 APPLICATIONS ·Audio ,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simpli. -off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=5A ;IB=5mA IC=5A ;IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 55 60 MIN 110 TYP. 2SD2493 SYMBOL V(BR)CEO VCE. |
| Part Number | 2SD2493 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Co. otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 110V; IE= 0 IEBO Emitter. |