Datasheet Details
| Part number | 2SD2493 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2493-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | 2SD2493 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 222.22 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2493-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Complement to Type 2SB1624 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2493 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2493 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD2493 | Silicon NPN Transistor | Sanken electric |
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2SD2493 | SILICON POWER TRANSISTOR | SavantIC |
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