Datasheet Details
| Part number | 2SD2498 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2498-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD2498 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.19 KB |
| Description | NPN Transistor |
| Datasheet | 2SD2498-INCHANGE.pdf |
|
|
|
·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A ICP Collector Current- Pulse 12 A IB Base Current- Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2498 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA;
IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SD2498 | NPN Transistor | Toshiba Semiconductor |
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2SD2498 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SD2490 | NPN Transistor |
| 2SD2493 | NPN Transistor |
| 2SD2494 | NPN Transistor |
| 2SD2495 | NPN Transistor |
| 2SD2499 | NPN Transistor |
| 2SD2400 | NPN Transistor |
| 2SD2401 | NPN Transistor |
| 2SD2406 | NPN Transistor |
| 2SD2438 | NPN Transistor |
| 2SD2439 | NPN Transistor |