2SD2490
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min)
- High DC current gain
: h FE= 1000(Min) @IC= 1A
- Low Collector Saturation Voltgae-
: VCE(sat)= 1.5V(Max.)@ IC= 1A
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Audio ,regulator and general purpose
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
CHARACTERISTICS...
