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2SD2490 - NPN Transistor

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Part number 2SD2490
Manufacturer INCHANGE
File Size 193.80 KB
Description NPN Transistor
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Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) High DC current gain : hFE= 1000(Min) @IC= 1A Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio ,regulator and general purpose Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage

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