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2SD2539 Datasheet

The 2SD2539 is a SILICON POWER TRANSISTOR. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2539
ManufacturerSavantIC
Overview ·With TO-3P(H)IS package ·High voltage ;high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 . ge Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=400mA ;IB=0 IC=5A; IB=1.0A IC=5A; IB=1.0A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE.
Part Number2SD2539
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Breakdown Voltage- :VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation AP. wn Voltage IE= 200mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.3 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 66 200 mA hFE-1 DC C.
Part Number2SD2539
DescriptionNPN Triple Diffused Planar Silicon Transistor
ManufacturerToshiba
Overview 2SD2539 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2539 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV l High Voltage : VCBO = 1500 V l Low Saturation Voltage : VCE (sat) = 5 V (Max.) . rward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 400 mA, IB = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5.