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2SD2642 Datasheet

The 2SD2642 is a Silicon NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD2642
ManufacturerSanken
Overview Equivalent circuit C Darlington 2SD2642 sElectrical Characteristics Symbol ICBO IEBO Conditions VCB=110V VEB=5V IC=30mA VCE=4V, IC=5A IC=5A, IB=5mA IC=5A, IB=5mA VCE=12V, IE=–0.5A VCB=10V, f=1MHz R. ton (µs) 0.8typ tstg (µs) 6.2typ tf (µs) 1.1typ 2.54 3.9 B C E ±0.2 0.8±0.2 a b ø3.3±0.2 Weight : Approx 2.0g a. Part No. b. Lot No. I C
  – V CE Characteristics (Typical) A 1m V CE ( sat )
  – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t) (V ) 3 6 I C
  – V B.
Part Number2SD2642
DescriptionSilicon NPN Darlington Power Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Co. wise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 5mA ICBO Collector Cutoff Current VCB= 110V; IE= 0 IEBO Emitter Cuto.

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