| Part Number | 2SD635 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Complement to type 2SB673/675 ·DARLINGTON ·High DC current gain ·Low saturation voltage APPLICATIONS ·High power switching ·Hammer drive,pulse motor drive PINNING PIN 1 2 3 Base. DITIONS 2SD633 2SD635 SYMBOL MIN 100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 1.5 2.0 2.5 V V V VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 2SD635 ICBO. |
2SD635 Datasheet and Specifications PDF
The 2SD635 is a (2SD633 / 2SD635) SILICON POWER TRANSISTOR.
Key Specifications
| Package | TO-220AB |
|---|---|
| Max Operating Temp | 150 °C |
| Part Number | 2SD635 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High DC Current Gain : hFE= 2000(Min.) @IC= 3.0A ·Low Saturation Voltage : VCE(sat)= 1.5V(Max.)@ IC= 3.0A ·Complement to Type 2SB675 ·Minimum Lot-to-Lot variations for robust device performance and r. 25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA 2.0 V VB. |