2SD635 Overview
Description
With TO-220C package - Complement to type 2SB673/675 - DARLINGTON - High DC current gain - Low saturation voltage APPLICATIONS - High power switching - Hammer drive,pulse motor drive PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION SYMBOL VCBO PARAMETER 2SD633 Collector-base voltage 2SD635 2SD633 VCEO VEBO IC IB PC Tj Tstg Collector-emitter voltage 2SD635 Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open collector Open base 60 5 7 0.7 40 150 -50~150 V A A W Open emitter 60 100 V CONDITIONS VALUE 100 V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SD633 IC=50mA; IB=0 2SD635 IC=3A; IB=6mA IC=7A; IB=14mA IC=3A; IB=6mA VCB=100V; IE=0 CONDITIONS 2SD633 2SD635 SYMBOL MIN 100 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 60 1.5 2.0 2.5 V V V VCEsat-1 VCEsat-2 VBEsat Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage 2SD633 2SD635 ICBO Collector cut-off current 100 VCB=60V; IE=0 VEB=5V; IC=0 IC=3A ; VCE=3V IC=7A ; VCE=3V 2000 1000 3.0 15000 µA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC=45V;RL=15A 0.8 3.0 2.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD633 2SD635 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3.
