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Transistor
2SD638, 2SD639
Silicon NPN epitaxial planer type
For medium-power general amplification Complementary to 2SB643 and 2SB644
6.9±0.1 2.5±0.1 1.0
Unit: mm
2.4±0.2 2.0±0.2 3.5±0.1
q q
Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C)
Ratings 30 60 25 50 7 1 0.5 600 150 –55 ~ +150 Unit V
1.0
0.45±0.05 1
s Features
1.5
1.5 R0.9 R0.9
0.4
1.0±0.1
R
0. 7
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD638 2SD639 2SD638 VCEO VEBO ICP IC PC Tj Tstg VCBO Symbol
0.85
0.55±0.
2SD638 Datasheet
