55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.5 3 2 1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
EIAJ:SC.
71 M Type Mold Package
s Electrical Characteristics
Parameter Collector cutoff curr.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
Unit: mm
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
s Features
q q q
1.5 R0.9 R0.9
0.85
(Ta=25˚C)
Ratings 60 50 7 200 100 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Base 2:Collector 3:Emitter
2.5 2.
2SD637 Datasheet
