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2SD639 - Silicon PNP Transistor

Datasheet Summary

Features

  • q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings.
  • 30.
  • 60.
  • 25.
  • 50.
  • 7.
  • 1.
  • 0.5 600 150.
  • 55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Base 2:Collec.

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Datasheet Details

Part number 2SD639
Manufacturer Panasonic Semiconductor
File Size 39.79 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SD639 Datasheet
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Full PDF Text Transcription

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Transistor 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD638 and 2SD639 6.9±0.1 1.5 2.5±0.1 1.0 1.0 2.4±0.2 2.0±0.2 3.5±0.1 Unit: mm s Features q 1.5 R0.9 R0.9 1.0±0.1 0.85 Parameter Collector to base voltage Collector to 2SB643 2SB644 2SB643 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 600 150 –55 ~ +150 Unit 0.55±0.1 0.45±0.05 1.25±0.05 V 3 2 1 emitter voltage 2SB644 Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature V V A A mW ˚C ˚C 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package 2.5 2.
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