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2SD638 - Silicon NPN Transistor

This page provides the datasheet information for the 2SD638, a member of the 2SD0638 Silicon NPN Transistor family.

Datasheet Summary

Features

  • 9 R 0.7 1 www. DataSheet4U. net 2SD0638 PC  Ta 800 800 700 IC  VCE Ta = 25°C IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 4 mA 400 300 200 100 0 3 mA 2 mA 1 mA 800 700 IC  I B VCE = 10 V Ta = 25°C Collector power dissipation PC (mW) 700 Collector current IC (mA) 600 500 400 300 200 100 0 600 500 Collector current IC (mA) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 4 8 12 16 20 0 2 4 6 8 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base cu.

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Datasheet preview – 2SD638

Datasheet Details

Part number 2SD638
Manufacturer Panasonic Semiconductor
File Size 100.31 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD638 Datasheet
Additional preview pages of the 2SD638 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature * 1.0±0.1 (0.85) 2.4±0.2 0.45±0.05 VCBO VCEO VEBO IC ICP PC Tj Tstg 30 25 7 0.5 1 600 150 −55 to +150 V V V A A mW °C °C 3 (2.5) 2 (2.5) 1 1.25±0.05 Symbol Rating Unit 0.55±0.
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