| Part Number | 2SD716 Datasheet |
|---|---|
| Manufacturer | SavantIC |
| Overview | ·With TO-3P(I) package ·Complement to type 2SB686 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector. ration voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ,IB=0 IE=10mA ,IC=0 IC=4A; IB=0.4A IC=4A ; VCE=5V VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 12 MI. |
2SD716 Datasheet and Specifications PDF
The 2SD716 is a SILICON POWER TRANSISTOR.
| Part Number | 2SD716 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Toshiba |
| Overview |
:
SILICON NPN TRIPLE DIFFUSED TYPE
POWER AMPLIFIER APPLICATIONS. FEATURES
• Complementary to 2SB686. • Recommended for 30 ^ 35W High-Fidelity Audio
Frequency Amplifier Output Stage.
15.9MAX.
Unit i.
* Complementary to 2SB686. * Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. 15.9MAX. Unit in mm 03.2±O.2 r-Tjr - |
| Part Number | 2SD716 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V (Max)@IC= 4A ·Complement to Type 2SB686 ·Minimum Lot-to-Lot variations for robu. S V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 5V ICBO Collector Cutoff Current VCB= 100V ; IE= 0 IEBO Emit. |