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2SD798 Datasheet

The 2SD798 is a NPN Transistor. Download the datasheet PDF and view key features and specifications below.

Part Number2SD798
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·High DC Current Gain : hFE= 1500(Min) @ IC= 2A, VCE= 2V ·Minimum Lot. ngton Power Transistor 2SD798 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; L= 40mH 300 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) .
Part Number2SD798
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-220 package ·High voltage ·DARLINGTON APPLICATIONS ·With switching and igniter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-22. urrent gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A ;IB=0.04A IC=4A ;IB=0.04A VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 1500 200 35 MIN 300 www.datasheet4u.com 2SD798 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB TYP..
Part Number2SD798
DescriptionNPN Transistor
ManufacturerToshiba
Overview : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . 2SD798 IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRI.
* High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.SMAX., ,03.6±a.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C).

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