2SD820 Datasheet and Specifications PDF

2SD820 SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VcBO=1500V • Low Saturation Voltage : v CE(sat)=5V (Max.) (I C =4A, • High Speed : .

* High Voltage : VcBO=1500V
* Low Saturation Voltage : v CE(sat)=5V (Max.) (I C =4A,
* High Speed : tf=1.0ys (Max.) I B=0.8A)
* Glass Passivated Collector-Base Junction. Unit in mm 025.OMAX , 021.OMAX + Q09 £10-0.03 W MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL V.

·With TO-3 package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simpl.

V VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 CO.

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and re.

se-Emitter Saturation Voltage IC= 4A; IB= 0.8A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain
*Bandwidth Product IC= 0.1A; VCE= 10V tf .