2SD821 Datasheet and Specifications PDF

: SILICON NPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO=1500V • Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A) • High Speed : t.

* High Voltage : VCBO=1500V
* Low Saturation Voltage : VCE (sat)=5V (Max.) (I C=5A, I B =1A)
* High Speed : t f =1.0us (Max.)
* Glass Passivated Collector-Base Junction. Unit in mm p*25.0MAX. £21.0 MAX . fQ09 £1.0-003 3Q2±02 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector.

·With TO-3 package ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simpl.

V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V 8 20 COB O.

·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 5.0V(Max.)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and re.

-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz fT Current-Gain
*Bandwidth Product IC= 0.1A; VCE= 10V tf Fall.