2SJ551L Datasheet
2SJ551L Datasheet (Hitachi Semiconductor)
Hitachi Semiconductor
2SJ551(L),2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050 Ω typ. • Low drive current. • 4V gate dri.
* Low on-resistance R DS(on) = 0.050 Ω typ.
* Low drive current.
* 4V gate drive devices.
* High speed switching.
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
2SJ551(L),2SJ551(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source vol.
2SJ551L Datasheet (Renesas)
Renesas
High speed power switching REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High s.
* Low on-resistance RDS (on) = 0.050 Ω typ.
* Low drive current.
* 4 V gate drive devices.
* High speed switching.
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
4
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
4
D
1 2 3
123
G S
1. Gate 2. Drain 3. S.