The 2SK1070 is a Silicon N-Channel Junction FET.
| Max Operating Temp | 150 °C |
|---|
| Part Number | 2SK1070 Datasheet |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SK1070
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
MPAK
3 1 2
1. Drain 2. Source 3. Gate
2SK1070
Absolute Maximum Ratings (Ta = 25°C)
Item Gate to.
Hz
1. The 2SK1070 is grouped by I DSS as follows.
See characteristic curves of 2SK435.
2
2SK1070
Maximum Channel Dissipation Curve Channel Power Dissipation Pch (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.65
0.10 3 * 0.4 + * 0.05 0.16 * 0.06 + 0.10 1.5 ± 0.15. |
| Part Number | 2SK1070 Datasheet |
|---|---|
| Description | Silicon N-Channel Junction FET |
| Manufacturer | Renesas |
| Overview |
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th.
admittance
|yfs| 20 30 * mS VDS = 5 V, VGS = 0, f = 1 kHz Input capacitance Ciss * 9 * pF VDS = 5 V, VGS = 0, f = 1 MHz Notes: 1. The 2SK1070 is grouped by IDSS as follows. Grade C D E Mark PIC PID PIE IDSS 12 to 22 18 to 30 27 to 40 Main Characteristics Maximum Channel Dissipation. |
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