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2SK1167 Datasheet

The 2SK1167 is a Silicon N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part Number2SK1167
ManufacturerHitachi Semiconductor
Overview 2SK1167, 2SK1168 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for swit.
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* Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1167, 2SK1168 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1167.
Part Number2SK1167
DescriptionSilicon N-Channel MOSFET
ManufacturerRenesas
Overview 2SK1167, 2SK1168 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switch.
* Low on-resistance
* High speed switching
* Low drive current
* No secondary breakdown
* Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1 2 3 REJ03G0915-0200 (Previous: ADE-208-1253) Rev.2.00 Sep 07, 2005 D G 1. Gate 2. Drai.
Part Number2SK1167
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX) ·Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA) ·100% avalanc.
*With TO-3PN packaging
*Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX)
*Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operationz
*APPLICATIONS
*Switching applications
*DC-DC converters .