Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- With TO-3PN packaging
- Low drain-source on-resistance:
RDS(ON) =0.36Ω (MAX)
- Enhancement mode:
Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA)
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operationz
- APPLICATIONS
- Switching applications
- DC-DC converters
- Uninterruptible power supply
-...
