2SK1167 - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-3PN packaging.
Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX).
Enhancement mode: Vth = 3.0 to 4.0V (VDS = 10 V, ID=1mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operationz.

2SK1167 n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2SK1167
Manufacturer	Inchange Semiconductor
File Size	277.15 KB
Description	N-Channel MOSFET
Datasheet	2SK1167 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SK1167	Silicon N-Channel MOSFET	Hitachi Semiconductor
2SK1167	Silicon N-Channel MOSFET	Renesas
2SK1160	Silicon N-Channel MOSFET	Hitachi Semiconductor
2SK1160	Silicon N-Channel MOSFET	Renesas
2SK1161	Silicon N-Channel MOSFET	Hitachi Semiconductor

Other Datasheets by Inchange Semiconductor

Part Number	Description
2SK1162	N-Channel MOSFET
2SK1169	N-Channel MOSFET
2SK1105	N-Channel MOSFET
2SK1180	N-Channel MOSFET
2SK1008	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.36Ω (MAX) ·Enhancement mode: Vth = 3.0 to 4.