2SK184 Datasheet and Specifications PDF

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK184 2SK184 Low Noise Audio Amplifier Applications Unit: mm · High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) · High breakd.

VDS = 10 V, VGS = 0 VGS (OFF) ïYfsï Ciss VDS = 10 V, ID = 0.1 mA VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz Crss NF (1) VDG = 10 V, ID = 0, f = 1 MHz VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 10 Hz NF (2) VDS = 10 V, RG = 1 kW, ID = 0.5 mA, f = 1 kHz Note: IDSS classificati.

2SK1849-VB 2SK1849-VB Datasheet N-Channel 100 V (D-S) MOSFET MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () ID (A)a 0.240 at VGS = 10 V 2.0 100 0.250 at VGS = 6 V 1.8 0.260 at VGS = 4.5 V 1.7 .

* Trench Power MOSFET
* 100 % Rg Tested
* 100 % UIS Tested
* Material categorization: APPLICATIONS
* DC/DC Converters
* Load Switch
* LED Backlighting in LCD TVs ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source .

Ordering number:EN4501 N-Channel Silicon MOSFET 2SK1849 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions uni.

* Low ON resistance.
* Ultrahigh-speed switching.
* Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1849] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Cur.

Ordering number:EN4500 N-Channel Silicon MOSFET 2SK1848 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensions uni.

* Low ON resistance.
* Ultrahigh-speed switching.
* Low-voltage drive. Package Dimensions unit:mm 2091A [2SK1848] 0.4 3 0.16 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0.95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage .