| Part Number | 2SK2480 Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The 2SK2480 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
10.0±0.3
• Low On-Resistance
RDS (on) = 4.0 Ω (VGS.
10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Di. |
2SK2480 Datasheet and Specifications PDF
The 2SK2480 is a N-Channel MOSFET.
| Part Number | 2SK2480 Datasheet |
|---|---|
| Description | MOS FIELD EFFECT TRANSISTOR |
| Manufacturer | Renesas |
| Overview |
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for th.
10.0±0.3
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) 15.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Di. |